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| LL4148, LL4150, LL4151, LL4448 LL4148, LL4150, LL4151, LL4448 Ultrafast Switching Surface Mount Si-Planar Diodes Ultraschnelle Si-Planar-Dioden fur die Oberflachenmontage Version 2005-08-15 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.50.1 Type Typ 150...300 mA 50...100 V SOD-80C 0.04 g Glass case MiniMELF Glasgehause MiniMELF Weight approx. Gewicht ca. Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Mae [mm] Maximum ratings (TA = 25C) Type Typ LL4148 LL4150 LL4151 LL4448 Type Typ Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Non-repetitive peak forward current Stostrom-Grenzwert Max. power dissipation Max. Verlustleistung Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur tp = 1 s Tj = 25C IFAV IFRM IFSM Ptot Tj TS Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 75 50 50 75 LL4148 LL4448 0.3 0.3 Grenzwerte (TA = 25C) Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 1) 100 50 75 100 LL4150 300 mA 2) 600 mA 2) 4000 mA 500 mW 2) -50...+200C -50...+200C LL4151 200 mA 2) 500 mA 2) 2000 mA 150 mA 2) 500 mA 2) 2000 mA 1 2 Tested with pulses IR = 100 A, tp = 300 s, duty cycle 2% Gemessen mit Impulsen IR = 100 A, tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 25 mm2 copper pads at each terminals Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 1 LL4148, LL4150, LL4151, LL4448 Characteristics (Tj = 25C) Type Typ LL4148 Forward voltage Durchlass-Spannung VF [V] at/bei IF [mA] <1 10 Leakage current Sperrstrom IR [nA] at/bei VR [V] < 25 < 5.000 < 50.000 < 100 < 100.000 20 75 20 (Tj = 150C) 50 50 (Tj = 150C) Kennwerte (Tj = 25C) Rev. recovery time 2) Sperrverzugszeit 2) trr [ns] <4 LL4150 0.54...0.62 0.66...0.74 0.76...0.86 0.82...0.92 8.87...1.00 <1 0.62...0.72 <1 1 10 50 100 200 50 5 100 <4 LL4151 LL4448 < 50 < 50.00 < 20 < 5.000 < 50.000 50 50 (Tj = 150C) 25 75 20 (Tj = 150C) RthA <2 <4 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 300 K/W 1) 120 [%] 100 10 [A] 1 80 Tj = 125C 60 10-1 40 10 20 IFAV 0 0 TA 50 100 150 [C] 1 -2 Tj = 25C IF 10-3 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp.1) Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 2 1 IF = 10 mA through/uber IR = 10 mA to/auf IR = 1 mA, VR = 6 V, RL = 100 Mounted on P.C. board with 25 mm2 copper pads at each terminals Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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